| PART |
Description |
Maker |
| V62C3802048LL-35T V62C3802048LL-35V V62C3802048LL- |
256K X 8 STANDARD SRAM, 35 ns, PDSO32
256K X 8 STANDARD SRAM, 45 ns, PDSO32
Ultra Low Power 256K x 8 CMOS SRAM 超低功256K × 8 CMOS SRAM
Ultra Low Power 256K x 8 CMOS SRAM 超低功56K × 8 CMOS SRAM
|
MOSEL-VITELIC
Mosel Vitelic, Corp.
Mosel Vitelic Corp
MOSEL[Mosel Vitelic, Corp]
Mosel Vitelic Corp
|
| IS62WV25616DALL/DBLL IS65WV25616DBLL |
256K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC SRAM
|
Integrated Silicon Solution, Inc
|
| IS62VV25616LL-85M IS62VV25616LL-85MI IS62VV25616LL |
256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM
|
Integrated Silicon Solution, Inc
|
| N02L83W2AT5I N02L83W2AT5IT N02L83W2AN25I N02L83W2A |
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K ? 8 bit
2Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 8 bit
|
ON Semiconductor
|
| N04L1630C2B |
4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY
|
AMI SEMICONDUCTOR
|
| N04Q1618C2BX-85C N04Q1612C2BX-15C N04Q1618C2B N04Q |
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K×16 bit POWER SAVER TECHNOLOGY
4Mb Ultra-Low Power Asynchronous CMOS SRAM w/ Dual Vcc and VccQ for Ultimate Power Reduction 256K】16 bit POWER SAVER TECHNOLOGY
|
AMI[AMI SEMICONDUCTOR]
|
| KM616U4000C |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| GLT6100L08LL-100ST GLT6100L08LL-100TS GLT6100L08LL |
100ns; Ultra low power 128k x 8 CMOS SRAM
55ns; Ultra low power 128k x 8 CMOS SRAM
70ns; Ultra low power 128k x 8 CMOS SRAM
85ns; Ultra low power 128k x 8 CMOS SRAM
|
G-LINK Technology
|
| V53C8256H35 |
ULTRA-HIGH SPEED, 256K X 8 FAST PAGE MODE CMOS DYNAMIC RAM 超高速，256K × 8快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
| MB84256A-70P-SK MB84256A-10P-SK MB84256A-70PFTN MB |
CMOS 256K bit Low Power SRAM
CMOS 256 KBit Low Power SRAM
CMOS 256K-BIT LOW POWER SRAM
|
Fujitsu Component Limited.
|
